Silicon Sensor 

Silicon Sensor Silicon Photodiodes

Silicon Photodiodes

Silicon Photodiodes are used to convert photonic energy (e.g. photons) to electrical current. Silicon has unique properties for light detection from 200nm to 1100nm as well as detection of α, β,ϒ and X-ray radiation.
The Silicon Sensor International AG product line includes six different series of silicon photodiodes. Each series is specially fabricated to address different performance specifications and design goals.

All these series are available in a wide variety of standard sizes, configurations and packages including detector amplifier and detector-optical filter combinations. Additionally, multi-element arrays and modules are also available as well as a full custom design and manufacturing capability.
All Series can be modified for customer specific applications. 

  Silicon Sensor Photodiodes
Silicon Sensor silicon photodiodes
Type No.
Active area
Dark Current (nA)
Rise Time (ns)
 
Chip
Package
Size (mm)
Area (mm2)
5V
410nm/5V/50Ω
 
Series 2: UV and blue Enhanced PDF  
  • UV sensitivity enhanced type
  • IR sensitivity suppressed
  • Low dark current
  • Long-term stability
 PC1-2
TO52
Ø1.13
1
0.2
  100
PDF
PC2-2
TO5
Ø1.6
2
0.4
  100
PDF
PC5-2
TO5
Ø2.52
5
1
  200
PDF
PC10-2
TO5
Ø3.57
10
1
   300
PDF
PC20-2
TO8
Ø5.05
20
2
  600
PDF
PC50-2
BNC
Ø7.98
50
5
  1000
PDF
PC100-2
BNC Ø11.28
100
10
  2000
PDF
PR33-2
TO8
5.5x6.1
33
2
  600
PDF
PS20-2
TO8
4.5x4.5
20
0.2
  600
PDF
PS100-2
CERpin
10x10
100
0.5
  typ. 2000
PDF
Type No.
 		 Active Area
 		 Dark Current (nA)
Rise Time (ns)
 
Chip
Package
Size (mm)
Area (mm2)
10V
900nm/10V/50Ω  
Series 4: Low Series Resistance PDF                    
  • Pin –Photodiodes optimized for photovoltaic use
  • Low series resistance
  • Linearity over a large linear power range
  • Low noise
 PS20-4
TO8
Ø5.05
20
0.2
  250
PDF
PC100-4
BNC
Ø11.3
100
2
  500
PDF
 
Type No. 
Active Area 
Dark Current (nA) 
Rise Time (ns) 
 
Chip 
Package
Size (mm)
Area (mm2)
20V
20V
850nm/20V/50Ω  
Series 5: High Speed Epitaxial PIN PDF                    
  • Pin-Photodiodes with epitaxial layer structure for fast rise time at low bias voltage
  • Epitaxial layer thickness optimized for best speed and responsivity at 850nm.
  • Low dark current at high operating temperature.
 PS0.25-5
TO52S1
0.5x0.5
0.25
0.05
0.3 
0.4
PDF
PS0.05-5
LCC6.1
0.5x0.5
0.25
0.05
0.3
0.4
PDF
PS1-5
TO52i
0.94x0.94
0.9
0.1
0.5
1.5
PDF
PS1-5
TO52S3
 1.9x1.9
3.6
0.4
2
 2.5
PDF
PS3.6-5
TO5
1.9x1.9
3.6
0.4
2
2.5
PDF
PS11.9-5
TO5
3.45x3.45
11.9
1
3
3
PDF
PC20-5
TO8
Ø5.05
20
2
5
3.5
PDF
PS100-5
CER pins
10x10
100
2
10
typ.5
PDF
  Type No.  
Active Area  
Dark Current (nA)  
Rise Time (ns) 850nm/50Ω   
  Chip
Package
Size (mm) 
Area (mm2) 
10V
 		 0V
 		 10V  80V  
Series 6: Low Dark Current (ld)  PDF                  
  • Pin –Photodiodes optimised for photovoltaic and photoconductive use
  • Very low dark current
  • High shunt resistance
  • Long carrier life time
  • High breakdown voltage
 PC1-6
TO52S1
Ø1.13
1
0.05
2000
10
5
PDF
PC1-6
TO52S3
Ø1.13
1
0.05
2000
10
5
PDF
PC2-6
TO5
Ø1.6
2
0.1
2000
12
5
PDF
PC5-6
TO5
Ø2.52
5
0.1
2000
13
6
PDF
PS7-6
TO5
2.66x2.66
7
0.1
2000
 15
6
PDF
PC10-6
TO5
Ø3.57
10
0.2
2000
20
6
PDF
PC20-6
TO8
Ø5.05
20
0.2
2000
25
6
PDF
PC50-6
BNC
Ø7.98
50
0.5
2000
30
7
PDF
PC50-6
TO8S
Ø7.98
50
0.5
2000
30
7
PDF
PC100-6
BNC
Ø11.28
100
1
2000
40
7
PDF
PC100-6
U1
Ø11.28
100
1
2000
40
7
PDF
PS100-6
CERpin
10x10
100
0.5
2000
50
7
PDF
  Type No. 
Active Area 
Dark Current (nA) Rise Time (ns)
 
  Chip 
Package
Size (mm)
Area (mm2)
5V
  410nm/5V/50Ω  
Series 6b: Ultra Blue Enhanced
  
               
  PS100-6B
CERpinS
10x10
100
0.5
  200
PDF
  PS100-6B
CERpinQ
10x10
100
0.5
  200
PDF
  PC10-6B
TO5
Ø3.57
10
0.15
  typ.20
PDF
  Type No.
Active Area  
Dark Current (nA) Rise Time (ns) 850nm/50Ω  
  Chip  
Package
Size (mm) 
Area (mm2) 
12V
80V
12V
 80V  
Series 7: Low Capacitance/ General Purpose PDF                      
  • Pin-Photodiodes optimized for photoconductive use
  • Very low capacitance level
  • Deep depletion region at low bias voltage
  • Low dark current
  • High NIR-responsivity of typ. 0,2A/W at 1064nm
 PC1-7
TO52S1
Ø1.13
1
0.5
  30
    PDF
PC1-7
TO52S3
Ø1.13
1
0.5
  30
    PDF
PC2-7
TO5
Ø1.6
2

0.5

   35
    PDF
PC5-7
TO5
Ø2.52
5
0.5
  45
    PDF
PC10-7
TO5
Ø3.57
10
0.5
  50
    PDF
PC20-7
TO8
Ø5.05
20
0.5
  50
    PDF
PC50-7
TO8S
Ø7.98
50
0.5
  55
    PDF
PC100-7
BNC
Ø11.28
100
5
  55
    PDF
PS100-7
CERpin
10x10
100
0.5
10
50
    PDF
PR200-7
CER
10x20
200
2
15
60
25
PDF
Series Q: 1064nm Enhanced 
                   
  • 0,38 A/W @ 1060nm
  • Fast response time
  • Low noise
  • Low capacitance
  • Peak sensitivity @ 980nm
                    

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Commercial Assistance:

Angie Parker

+44 (0)1480 226603

angiep@apc-hero.co.uk

  

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+44 (0)1480 226656

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