Silicon Sensor Avalanche Photodiodes

Silicon Avalanche Photodiodes (APDs) are high speed, high sensitivity photodiodes with an internal gain mechanism capable of a high gain bandwidth product. APDs are excellent for measurements at very low light levels where a fast response time is required. All Avalanche Photodiodes from the Silicon Sensor International AG are available in a wide range of sizes and packages, including Multi-Element Arrays.
Series 8 High Speed/High Gain	Type No.		Active Area		Dark Current (nA)	Breakdown Voltage (V)	Rise Time (ns)
Featuring high speed and high gain, these APDs are designed for general purpose applications such us distance measurement, laser scanning and optical communications. Peak sensitivity @ 800nm Optimized for high speed Low temperature coefficient Fast rise time Low bias operation Low capacitance	Chip	Package	Size (mm)	Area (mm²)	M - 100		M = 100
	AD100-8	TO52S1	ø0.1	0.01	0.05	120-190	<0.180
	AD230-8	TO52S1	ø0.23	0.04	0.3	80-200*	0.18
	AD230-8	TO52S3	ø0.23	0.04	0.3	80-200*	0.18
	AD500-8	TO52S1	ø0.5	0.2	0.5-1	80-200*	0.35
	AD500-8	TO52S2	ø0.5	0.2	0.5-1	120-190	0.35
	AD500-8	TO52S3	ø0.5	0.2	0.5-1	80-200	0.35
	AD800-8	TO5i	ø0.8	0.5	2	typ. 120-190	0.7
	AD1100-8	TO5i	ø1.13	1	4-6	typ. 120-190	1
	AD1900-8	TO5i	ø1.95	3	15	typ. 120-190	1.4
	AD2500-8	TO5i	ø2.52	5	20	typ. 120-190	1.5
	AD3000-8	TO5i	ø3	7.07	30	120-190	2
	AD5000-8	TO8i	ø5	19.63	60	120-190	3
	AD230-8	LCC6.1	dia 0.23	0.04	0.25....0.5*	80-200**	typ. 0.18
	AD230-8	LCC6.1f	ø0.23	0.04	0.25....0.5*	80-200**	typ. 0.18
	AD500-8	LCC6.1	ø0.5	0.2	0.25....0.5*	80-200**	typ. 0.35
	AD500-8	LCC6.1f	ø0.5	0.2	0.25....0.5*	80-200**	typ. 0.35
Series 9 NIR Enhanced Response	Type No.		Active Area		Dark Current (nA)	Breakdown Voltage (V)	Rise Time (ns)
These Avalanche Photodiodes are designed for applications in laser radar LIDAR, and laser rangefinders. This Series is the basic technology for development of multi-element arrays such as 8, 16, 32 elements etc. Fast rise time in the 900nm range Low gain slope Low bias operation Low temp. coefficient Up to 5mm diameter active area size available	Chip	Package	Size (mm)	Area (mm²)	M=100		M=100
	AD100-9	TO52S1	ø0.1	0.01	0.1	180-200	0.5
	AD230-9	TO52S1	ø0.23	0.04	0.6	160-240*	0.5
	AD230-9	TO52S3	ø0.23	0.04	0.6	160-240*	0.5
	AD500-9	TO52S1	ø0.5	0.2	0.5-1	160-240*	0.55
	AD500-9	TO52S2	ø0.5	0.2	0.5-1	180-240	0.55
	AD500-9	TO52S3	ø0.5	0.2	0.5-1	160-240*	0.55
	AD800-9	TO5i	ø0.8	0.5	2	180-240	1.3
	AD1100-9	TO5i	ø1.13	1	4-6	180-240	1.3
	AD1900-9	TO5i	ø1.95	3	15	180-240	1.4
	AD2500-9	TO5i	ø2.52	5	20	180-240	1.5
	AD3000-9	TO5i	ø3	7.07	30	180-240	2
	AD5000-9	TO8i	ø5	19.63	60	180-240	3
	AD003B-9	TO5i	1.1x0.3	0.33	2	min. 120	1
	AD500-9	TO52S1F2	ø0.5	0.2	0.5....1	120-300V	0.55
	Multi-Element Arrays
	AA16-9	DIL18	0.648x0.208	0.14	5	100-300	2
Series 10 1064 nm Enhanced	Type No.		Active Area		Dark Current (nA)	Breakdown Voltage (V)
This Avalanche Photodiode is well suited for laser range finding, target designation or any application detecting YAG laser and similar NIR emitters. High QE at 1064nm High sensitivity Low noise High speed Optimized for long wavelength light detection	Chip	Package	Size (mm)	Area (mm²)	M=Vop
	AD500-10	TO5i	ø0.5	0.2	5	320-500
	AD1500-10	TO5i	ø1.5	1.77	10	300-500
Series 11 Blue Enhanced	Type No.		Active Area		Dark Current (nA)	Breakdown Voltage (V)	Rise Time (ns)
With QE > 70% @ 400nm and peak sensitivity @ 600nm these new devices are well suited for Bio-Medical applications. High QE at blue range High gain Low Capacitance Fast rise time	Chip	Package	Size (mm)	Area (mm²)	M=100		410nm/50Ω
	AD800-11	TO52S1	ø0.8	0.5	1	100-200	1
	AD1900-11	TO5i	ø1.95	3	5	100-200	2
Series 12 Red Enhanced
High speed in the visible range Up to 3GHz cut off frequency Ultra low temperature coefficient Very high sensitivity in visible range Low bias operation