 | Position Sensing Photodiodes |
Series PSD  | Type No
| Dimensions
| Active Area
| Rise Time (ns)
| Interelectrode Resistance
| | |
| The lateral effect Position Sensitive Detector (PSD) is an optoelectronic device based on Silicon PIN diode technology. The PSD converts the energy from an incident light spot into a continuous, position relative, electrical output current. This position signal is relative to the total incident light pattern and indicates the “optical centre” of the incident light. - Single axis, duo-lateral and tetra-lateral PSD types
- High position resolution
- High linearity
| Chip
| Package
| | Size (mm)
| Area (mm2)
| 865nm/10V/50Ω
| | | |
OD3.5-6
| SO8
| single
| 3.5x1
| 3.5
| 200
| 50±20
| |
|
DL16-7
| CERsmd
| dual axis
| 4x4 | 16 | typ. 500
| 10 | |
|
DL16-7
| CERpin
| dual axis
| 4x4
| 16
| typ. 500
| 10
| |
|
DL100-7
| CERsmd
| dual axis
| 10x10
| 100
| 4000
| 12
| |
|
DL100-7
| CERpin
| dual axis
| 10x10
| 100
| 4000
| 12
| |
|
DL400-7
| CERsmd
| dual axis
| 20x20
| 400
| 4000
| 12
| |
|
DL400-7
| CERpin
| dual axis
| 20x20
| 400
| 4000
| 12
| |
|
OD3.5-6
| SMD
| single
| 3.5x1
| 3.5
| 200
| 50±20 | |
|
| Quadrant Photodiodes |
| Series QP | Type No.
| Elements
| Active Area
| Dark Current (nA)
| Rise Time (ns)
| |
| Silicon Sensor International AG Quadrant Photodiodes consist of an single chip with four active areas, separated by a small gap. These photodiodes are used in a wide range of applications such as position sensing of laser beams, autocollimators and other alignment applications. - Small GAP
- Low dark current
- High shunt resistance
- High resolution
- Special version for 1064nm.
| Chip
| Package
| | Size (mm)
| Area (mm2)
| 10V
| 850nm/10V/50Ω
| |
DP3.22-6
| TO5
| 2
| 1.4x2.3
| 3.22
| 0.3*
| 30
|
|
QP1-6
| TO5
| 4
| ø1.13
| 1
| 0.1*
| 20
|
|
QP2-6
| TO5
| 4
| ø1.6
| 2
| 0.1*
| 20
|
|
QP5-6
| TO5
| 4
| ø2.52
| 5
| 0.2*
| 20
|
|
QP5.8-6
| TO5
| 4
| 2.4x2.4
| 5.8
| 0.4*
| 20
|
|
QP10-6
| TO8S
| 4
| ø3.57
| 10
| 0.5*
| 20
|
|
QP20-6
| TO8S
| 4
| ø5.05
| 20
| 1*
| 30
|
|
QP50-6
| TO8S
| 4
| ø7.8
| 50
| 2*
| 40
|  |
 | Wavelength Sensitive Photodiodes
|
| Silicon Sensor International AG Wavelength Sensitive Detectors are made up of two monolithically vertically arranged photodetectors in one chip. This combination is especially suitable for determining the wavelength of monochromatic radiation. Evaluation is by simple formation of the arithmetic quotient from the two photocurrents. - Two p-n junctions constructed vertically
- Operating range: 450-950nm
- Spectral resolution : 0.01 nm
- Specially for monochromatic light
| Chip
| Package
| | | | 5V
| Diode 1 0 V 1 KΩ
| Diode 2 0 V 1KΩ | |
WS7.56
| TO5
|
| | | 10
| 10000
| 1000
|
|
WS7.56
| TO5i
| | | | 5
| 10000
| 1000
|
|
WS7.56
| PCBA
| | | | 10
| 10000
| 1000
|
|
